Theoretical and Natural Science
- The Open Access Proceedings Series for Conferences
Theoretical and Natural Science
Vol. 31, 02 April 2024
Open
Access | Article
Applications and technological evolution of FinFET in modern technology
* Author to whom correspondence should be addressed.
Abstract
FinFET technology, hailed as the successor to MOSFETs, has garnered significant attention due to its potential to address the challenges posed by the latter's scaling limitations. However, the adoption of FinFETs is not without its set of obstacles. Key issues, such as constraints imposed by material-induced bandgaps, the intricacies of manufacturing processes, and complications related to fin height, persistently challenge engineers and researchers alike. Notably, the material-induced bandgap limitations can be detrimental to the device's overall performance. The intricacies in manufacturing add layers of complexity to fabrication, making the production process not only meticulous but also expensive. Additionally, the precise control over fin height is crucial, as it has direct implications for device performance and variability. In response to these challenges, innovative solutions are continually being proposed. The advent of multiple gate designs has offered greater control over the device's electrical properties. Additionally, the integration of High-K dielectrics provides an improved gate oxide alternative, addressing the leakage current issues often observed in traditional designs. Moreover, techniques like selective epitaxial silicon growth have been introduced to rectify the external surface, ensuring better consistency and performance. Undoubtedly, these hurdles underscore the importance of relentless research and collaboration in the semiconductor industry. The drive to overcome these challenges not only pushes the boundaries of FinFET technology but also promises enhanced performance, efficiency, and scalability. This continuous evolution will undoubtedly pave the way for more refined and efficient FinFET solutions in the near future.
Keywords
Challenges, Fabrication, Materials, Improvements, Characteristics
References
1. Zheng, P., Connelly, D., Ding, F., & Liu, T. J. K. (2015). FinFET evolution toward stacked-nanowire FET for CMOS technology scaling. IEEE Transactions on Electron Devices, 62(12), 3945-3950.
2. Zhang, S. (2020, August). Review of modern field effect transistor technologies for scaling. In Journal of Physics: Conference Series (Vol. 1617, No. 1, p. 012054). IOP Publishing.
3. Bhole, M., Kurude, A., & Pawar, S. (2013). Finfet- benefits, drawbacks and challenges. International Journal of Engineering Sciences & Research Technology, 1(11).
4. Maurya, R.K., Bhowmick, B. Review of FinFET Devices and Perspective on Circuit Design Challenges. Silicon 14, 5783–5791 (2022). https://doi.org/10.1007/s12633-021-01366-z.
5. Zhu, X., Zhao, Z., Wei, X., & others. (2021). Action recognition method based on wavelet transform and neural network in wireless network. In 2021 5th International Conference on Digital Signal Processing (pp. 60-65).
6. Zhang, Y., Zubair, A., Liu, Z., Xiao, M., Perozek, J., Ma, Y., & Palacios, T. (2021). GaN FinFETs and trigate devices for power and RF applications: Review and perspective. Semiconductor Science and Technology, 36(5), 054001.
7. Chang, T. Y. J., Chen, Y. H., Chan, W. M., Cheng, H., Wang, P. S., Lin, Y., ... & Li, Q. (2020). A 5-nm 135-mb SRAM in EUV and high-mobility channel FinFET technology with metal coupling and charge-sharing write-assist circuitry schemes for high-density and low-V MIN applications. IEEE Journal of Solid-State Circuits, 56(1), 179-187.
8. Patnala, M., Yadav, A., Williams, J., Gopinath, A., Nutter, B., Ytterdal, T., & Rizkalla, M. (2020). Low power-high speed performance of 8T static RAM cell within GaN TFET, FinFET, and GNRFET technologies–A review. Solid-State Electronics, 163, 107665.
9. Nsengiyumva, P., Ball, D. R., Kauppila, J. S., Tam, N., McCurdy, M., Holman, W. T., ... & Massengill, L. W. (2016). A comparison of the SEU response of planar and FinFET D flip-flops at advanced technology nodes. IEEE Transactions on nuclear science, 63(1), 266-272.
10. Singh, J., Ciavatti, J., Sundaram, K., Wong, J. S., Bandyopadhyay, A., Zhang, X., ... & Samavedam, S. B. (2017). 14-nm FinFET technology for analog and RF applications. IEEE Transactions on electron devices, 65(1), 31-37.
Data Availability
The datasets used and/or analyzed during the current study will be available from the authors upon reasonable request.
This work is licensed under a Creative Commons Attribution-ShareAlike 4.0 International License. Authors who publish this series agree to the following terms:
1. Authors retain copyright and grant the series right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgment of the work's authorship and initial publication in this series.
2. Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the series's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgment of its initial publication in this series.
3. Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See Open Access Instruction).
- Volume Title
- Proceedings of the 3rd International Conference on Computing Innovation and Applied Physics
- ISBN (Print)
- 978-1-83558-317-3
- ISBN (Online)
- 978-1-83558-318-0
- Published Date
- 02 April 2024
- Series
- Theoretical and Natural Science
- ISSN (Print)
- 2753-8818
- ISSN (Online)
- 2753-8826
- DOI
- 10.54254/2753-8818/31/20241045
- Copyright
- 02 April 2024
- Open Access
- This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited